lead-free ds30295 rev. 6 - 2 1 of 7 cta2n1p www.diodes.com diodes incorporated characteristic symbol value unit power dissipation (note 1) p d 150 mw thermal resistance, junction to ambient (note 1) r ja 833 c/w operating and storage and temperature range t j ,t stg -55 to +150 c maximum ratings, total device @ t a = 25 c unless otherwise specified a b c j d h k f m l a03 maximum ratings, q1, mmbt4401 npn transistor element @ t a = 25 c unless otherwise specified new product cta2n1p complex transistor array characteristic symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current - continuous i c 600 ma maximum ratings, q2, bss84 p-channel mosfet element @ t a = 25 c unless otherwise specified characteristic symbol value units drain-source voltage v dss -50 v drain-gate voltage r gs 1.0m v dgr -50 v gate-source voltage continuous v gss 20 v drain current continuous i d -130 ma features mechanical data case: sot-363 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: solderable per mil-std-202, method 208 lead free plating (matte tin finish annealed over alloy 42 leadframe). terminal connections: see diagram marking: a03, see page 3 ordering information: see page 3 weight: 0.006 grams (approx.) combines mmbt4401 type transistor with bss84 type mosfet small surface mount package pnp/n-channel complement available: cta2p1n lead free/rohs compliant (note 2) sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm b q1 s q2 d q2 e q1 c q1 g q2 q2 q1 notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layou t document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead.
ds30295 rev. 6 - 2 2 of 7 cta2n1p www.diodes.com electrical characteristics, q1, mmbt4401 npn transistor element @ t a = 25 c unless otherwise specified new product electrical characteristics, q2, bss84 p-channel mosfet element @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 3) collector-base breakdown voltage v (br)cbo 60 v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 40 v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 v i e = 100 a, i c = 0 collector cutoff current i cex 100 na v ce = 35v, v eb(off) = 0.4v base cutoff current i bl 100 na v ce = 35v, v eb(off) = 0.4v on characteristics (note 3) dc current gain h fe 20 40 80 100 40 300 i c = 100a, v ce = 1.0v i c = 1.0ma, v ce = 1.0v i c = 10ma, v ce = 1.0v i c = 150ma, v ce = 1.0v i c = 500ma, v ce = 2.0v collector-emitter saturation voltage v ce(sat) 0.40 0.75 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma base-emitter saturation voltage v be(sat) 0.75 0.95 1.2 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma small signal characteristics output capacitance c cb 6.5 pf v cb = 5.0v, f = 1.0mhz, i e = 0 input capacitance c eb 30 pf v eb = 0.5v, f = 1.0mhz, i c = 0 input impedance h ie 1.0 15 k v ce = 10v, i c = 1.0ma, f = 1.0khz voltage feedback ratio h re 0.1 8.0 x 10 -4 small signal current gain h fe 40 500 output admittance h oe 1.0 30 s current gain-bandwidth product f t 250 mhz v ce = 10v, i c = 20ma, f = 100mhz switching characteristics delay time t d 15 ns v cc = 30v, i c = 150ma, v be(off) = 2.0v, i b1 = 15ma rise time t r 20 ns storage time t s 225 ns v cc = 30v, i c = 150ma, i b1 = i b2 = 15ma fall time t f 30 ns characteristic symbol min typ max unit test condition off characteristics (note 3) drain-source breakdown voltage bv dss -50 v v gs = 0v, i d = -250a zero gate voltage drain current i dss -15 -60 -100 a a na v ds = -50v, v gs = 0v, t j = 25 c v ds = -50v, v gs = 0v, t j = 125 c v ds = -25v, v gs = 0v, t j = 25 c gate-body leakage i gss 10 na v gs = 20v, v ds = 0v on characteristics (note 3) gate threshold voltage v gs(th) -0.8 -2.0 v v ds =v gs , i d = -1ma static drain-source on-resistance r ds (on) 10 v gs = -5v, i d = 0.100a forward transconductance g fs .05 s v ds = -25v, i d = 0.1a dynamic characteristics input capacitance c iss 45 pf v ds = -25v, v gs = 0v f = 1.0mhz output capacitance c oss 25 pf reverse transfer capacitance c rss 12 pf switching characteristics turn-on delay time t d(on) 10 ns v dd = -30v, i d = -0.27a, r gen = 50 ,v gs = -10v turn-off delay time t d(off) 18 ns notes: 3. short duration pulse test used to minimize self-heating effect.
ds30295 rev. 6 - 2 3 of 7 cta2n1p www.diodes.com new product notes: 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping CTA2N1P-7-F sot-363 3000/tape & reel ordering information (note 4) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key a03 = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september a03 ym marking information year 2001 2002 2003 2004 2005 2006 2007 2008 2009 code mnprstuvw
ds30295 rev. 6 - 2 4 of 7 cta2n1p www.diodes.com new product 0 50 100 25 50 75 100 125 150 175 200 p,p o wer dissipati o n (mw) d t , ambient temperature (c) fig. 1 max power dissipation vs ambient temperature (total device) a 150 200 0 1 10 1000 100 0.1 1 10 1000 100 h , dc current gain fe i , collector current (ma) fig. 2 typical dc current gain vs collector current c t = -25c a t = +25c a t = 125c a v = 1.0v ce 0.001 0.01 1 10 0.1 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 . 0 i , base current (ma) fi g .4 t y pical collector saturation re g ion b v , collector-emitter voltage (v) ce i=1ma c i = 10ma c i = 30ma c i = 100ma c i = 300ma c 1.0 5.0 20 10 30 0.1 10 1.0 50 capacitance (pf) reverse voltage (v) fig. 3 typical capacitance cobo cibo mmbt4401 section
ds30295 rev. 6 - 2 5 of 7 cta2n1p www.diodes.com new product mmbt4401 section 1 10 100 1000 1 10 100 i , collector current (ma) fig. 7 gain bandwidth product vs. collector current c f , gain bandwidth pr o duct (mhz) t v=5v ce 1 0.1 10 100 v , base emitter v o ltage (v) be(on) i , collector current (ma) fig. 6 base emitter voltage vs. collector current c 0.2 0.3 0.4 0.6 0.5 0.8 0.7 1.0 0.9 v=5v ce t = 25c a t = -50c a t = 150c a 1 10 100 1000 v,c o llect o rt o emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 5 collector emitter saturation voltage vs. collector current c t = 25c a t = -50c a t = 150c a 0 0.1 0.2 0.3 0.4 0.5 i c i b =10
ds30295 rev. 6 - 2 6 of 7 cta2n1p www.diodes.com new product bss84 section 0 3 6 9 12 1 5 -50 -25 0 25 50 125 100 75 150 t junction temperature (c) fi g . 11, on-resistance vs. junction temperature j , v = -10v i = -0.13a gs d 0 1 2 4 5 3 6 8 7 10 9 0 1 2 3 4 5 v , gate-to-source voltage (v) fi g . 10, on resistance vs. gate source volta g e gs t=25c a t = 125 c a -0.0 - 1 . 0 -0.8 -0.6 -0.4 -0.2 0 -2 -3 -4 -1 -8 -7 -6 -5 i , drain current (a) d v , gate-to-source voltage (v) gs fi g . 9, drain current vs. gate source volta g e t=-55c a t=25c a t = 125 c a 0 600 500 400 300 200 100 0 2 1 5 4 3 i , drain-to-source current (ma) d v , drain-to-source voltage (v) ds fig. 8, drain source current vs. drain source volta g e t=25c a v=5v gs 4.5v 3.5v 3.0v 2.5v
ds30295 rev. 6 - 2 7 of 7 cta2n1p www.diodes.com 0.0 5.0 10.0 -0.0 -0.2 -0.4 -0.6 -0.8 1.0 i , drain current (a) fi g . 12, on-resistance vs. drain current d 15.0 20.0 2 5. 0 v = -8v gs v=-10v gs v = -3v gs v = -3.5v gs v = -4v gs v = -4.5v gs v = -6v gs v = -5v gs new product bss84 section important notice life support www.diodes.com diodes, inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance- ments, improvements, or other changes. diodes, inc. does not assume any liability arising out of the application or use of any product described herei n; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. the products located on our website at are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of diodes incorporated.
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